论文信息 - Excitonic resonant photorefractive devices around 1.06 μm

Excitonic resonant photorefractive devices around 1.06 μm

Abstract InGaAs/GaAs multiple quantum well (MQW) photorefractive devices that have the sensitivity around the wavelength of 1.06 μm are fabricated and some characteristics are measured. Saturation intensity is 3.6 mW / cm 2 and cut off grating pitch is 1.4 μm . These values show that this device is usable in practical applications using Nd:YAG lasers. A vibration measurement system using two-wave mixing is also demonstrated.

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