论文信息 - Nb multilayer planarization technology for a subnanosecond Josephson 1K-bit RAM

Nb multilayer planarization technology for a subnanosecond Josephson 1K-bit RAM

A fabrication process for a Josephson 1-kb RAM (random access memory) has been developed using a Nb multilayer planarization technology. The technology consists of an etchback technique using 2000-molecular-weight polystyrene and SiO/sub 2/ for the junction layer and wiring layers, and a tapered edge etching technique for contact between individual wiring layers. Excellent planarity, wherein level differences in all step areas were reduced to less than 1/20th of their original values, was achieved. Appropriate RAM operation with 570-ps minimum access time and 13-mW power dissipation, were confirmed. >

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