Stability of silicon diodes as temperature sensors in the range 4.2 – 273 K

Abstract Thermometric properties of TESLA — KA 136 silicon diodes as temperature sensors in the range 1.5 — 380 K are presented. Special attention is paid to the stability of these sensors which was examined for 30 diodes. This stability has been verified both dynamically using a method of cycling the diodes from room temperature to the temperature of liquid helium 100 times and statically using a method of storing the diodes at room temperature for 1 and 2 year periods. It has been found that moe than 90% of the diodes considered have a stability better than 0.4 K and 0.3 K at temperatures 4.2 K and 273 K, respectively, after 30 cycles and 12 months storage.