Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

We present a model for 1/f noise in graphene based on an analysis of the effect of charge trapping and detrapping events on the fluctuations of the number of charge carriers. Inclusion of a Gaussian distribution of fluctuations of the electrostatic potential enables us to reproduce all the various experimentally observed behaviors of the flicker noise power spectral density as a function of carrier density, both for monolayer and bilayer graphene. The key feature of a flicker noise minimum at the Dirac point that appears in bilayer graphene and sometimes also in monolayer graphene is explained in terms of the disappearance, when the number of electrons equals that of holes, of the carrier number fluctuations induced by trapping events. Such a disappearance is analyzed with two different approaches, in order to gain a better understanding of the physical origin of the effect, and to make some considerations about possible analogous phenomena in other semiconductors.

[1]  Edward McCann.  Asymmetry gap in the electronic band structure of bilayer graphene , 2006 .

[2]  D. Horsell,et al.  Impurities as a source of flicker noise in graphene , 2011, 1107.3488.

[3]  Arindam Ghosh,et al.  Microscopic mechanism of 1/f noise in graphene: role of energy band dispersion. , 2011, ACS nano.

[4]  M. Shur,et al.  Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms , 2010, 2011 21st International Conference on Noise and Fluctuations.

[5]  Michael G. Spencer,et al.  Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene , 2009, 0901.0274.

[6]  S. Ramo.  Currents Induced by Electron Motion , 1939, Proceedings of the IRE.

[7]  Claudio Bonati,et al.  High-performance solution of the transport problem in a graphene armchair structure with a generic potential. , 2014, Physical review. E, Statistical, nonlinear, and soft matter physics.

[8]  Pellegrini.  Electric charge motion, induced current, energy balance, and noise. , 1986, Physical review. B, Condensed matter.

[9]  P. Avouris,et al.  Strong suppression of electrical noise in bilayer graphene nanodevices. , 2008, Nano letters.

[10]  Bruno Pellegrini.  1/f noise in graphene , 2013 .

[11]  Paolo Marconcini,et al.  Approximate calculation of the potential profile in a graphene-based device , 2015, IET Circuits Devices Syst..

[12]  Kang L. Wang,et al.  Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. , 2010, Nano letters.

[13]  Cees Dekker,et al.  Charge noise in graphene transistors. , 2010, Nano letters.

[14]  Paolo Marconcini,et al.  The k.p method and its application to graphene, carbon nanotubes and graphene nanoribbons: the Dirac equation , 2011, 1105.1351.

[15]  Xu Du,et al.  Mobility-dependent low-frequency noise in graphene field-effect transistors. , 2011, ACS nano.

[16]  A. Balandin,et al.  Low-frequency 1/f noise in graphene devices. , 2013, Nature nanotechnology.

[17]  Bruno Pellegrini.  A general model of 1/fγ noise , 2000 .

[18]  S. Machlup,et al.  Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .

[19]  W. Shockley.  Currents to Conductors Induced by a Moving Point Charge , 1938 .

[20]  F. Hooge.  1/ƒ noise is no surface effect , 1969 .

[21]  D. Jena,et al.  Carrier statistics and quantum capacitance of graphene sheets and ribbons , 2007, 0707.2242.