Progress in rectifying-based RRAM passive crossbar array

Resistive random access memory (RRAM) with crossbar structure is receiving widespread attentions due to its simple structure, high density, and feasibility of three-dimensional (3D) stack. It is an extremely promising solution for high density storage. However, a major issue of crosstalk restricts its development and application. In this paper, we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array, and then focus on the 1D1R (one diode and one resistor) structure and self-rectifying 1R (one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array. The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell (1T1R) structure. Finally, the future research direction of rectifying-based RRAM passive crossbar array is discussed.

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