论文信息 - 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors

324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors

Light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n+-Al0.2Ga0.8N buffer layers. The AlGaN buffer layers were deposited over sapphire using strain-relieving AlN/AlGaN superlattices. Pulsed powers as high as 4 mW were measured for a pump current of 900 mA.

[1] Hong Wang,et al. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management , 2002 .

[2] M. Shur,et al. Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[3] Ayumu Tsujimura,et al. Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth , 2000 .