The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
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P. Mawby | Y. Sharma | M. Dudley | M. Walker | P. Gammon | B. Raghothamachar | Y. Bonyadi | O. Vavasour | T. Dai | G. Baker | A. Renz | F. Li | S. Hindmarsh | Y. Han | Y. Liu | V. Shah | Y. Han | F. Li