A Simple Method to Identify Radiation and Annealing Biases That Lead to Worst-Case CMOS Static Ram Postirradiation Response
暂无分享,去创建一个
[1] K. Y. Chiu,et al. Charge transport studies in SiO 2 : Processing effects and implications for radiation hardening , 1974 .
[2] Allan H. Johnston,et al. Super Recovery of Total Dose Damage in MOS Devices , 1984, IEEE Transactions on Nuclear Science.
[3] P. S. Winokur,et al. Physical Mechanisms Contributing to Device "Rebound" , 1984, IEEE Transactions on Nuclear Science.
[4] Bharat L. Bhuva,et al. Simulation of Worst-Case Total Dose Radiation Effects in CMOS VLSI Circuits , 1986, IEEE Transactions on Nuclear Science.
[5] P. S. Winokur,et al. Predicting CMOS Inverter Response in Nuclear and Space Environments , 1983, IEEE Transactions on Nuclear Science.
[6] J. R. Schwank,et al. Using a 10-keV X-Ray Source for Hardness Assurance , 1986, IEEE Transactions on Nuclear Science.
[7] James R. Schwank,et al. Correlation of Radiation Effects in Transistors and Integrated Circuits , 1985, IEEE Transactions on Nuclear Science.
[8] B. L. Gregory,et al. Process Optimization of Radiation-Hardened CMOS Integrated Circuits , 1975, IEEE Transactions on Nuclear Science.
[9] P. S. Winokur,et al. Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing , 1986, IEEE Transactions on Nuclear Science.
[10] J. Benedetto,et al. Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose , 1986, IEEE Transactions on Nuclear Science.
[11] K. Aubuchon,et al. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator , 1971 .
[12] C. L. Axness,et al. Mechanisms Leading to Single Event Upset , 1986, IEEE Transactions on Nuclear Science.
[13] J. M. Soden,et al. The Effects of Test Conditions on MOS Radiation-Hardness Results , 1981, IEEE Transactions on Nuclear Science.