Changing Technology Requirements of Mask Metrology in Semiconductor Industry
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Upcoming Semiconductor Technology Nodes will still be based on optical lithography by ArF water immersion technology because there are still too many open issues preventing extreme ultraviolet (EUV) lithography from being introduced into production. Several kinds of multi- patterning technology are in use to overcome the optical resolution limitation of 193nm high NA illumination and still to achieve <32nm half-pitch. Mask registration metrology must be adapted to provide useful and comprehensive data on the mask contribution to wafer overlay
[1] F. Laske,et al. Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications , 2011, Photomask Technology.
[2] You Seung Jin,et al. Impact of pellicle on overlay in double patterning lithography , 2011, Advanced Lithography.
[3] DongSub Choi,et al. Mask registration impact on intrafield on-wafer overlay performance , 2011, Advanced Lithography.