XHR SEM: enabling extreme high resolution scanning electron microscopy

The low voltage scanning electron microscope (SEM) is widely used in many industrial and research applications due to its ability to image surface details and to minimize charging and beam damage effects on sensitive samples. However, fundamental limitations in beam performance have existed, most notably in the chromatic aberration effects, which become larger as the beam voltage is reduced. The introduction of the extreme high resolution (XHR) SEM has demonstrated that sub-nanometer resolution can be achieved at low beam voltages, revealing fine surface detail. This system uses a source monochromator to reduce the effects of chromatic aberrations, resulting in a more tightly focused electron beam. Beam deceleration is available to provide a further improvement in imaging at low voltages and to give additional flexibility in optimizing the image contrast. While the monochromator is a necessary enabler of the improved imaging performance, further system elements, such as scanning, detectors, stage and environmental controls - that go into completing the SEM - are also key to the usability and throughput when it comes to practical day-to-day performance.

[1]  Ingo Gestmann,et al.  Extreme high resolution scanning electron microscopy (XHR SEM) and beyond , 2009, Scanning Microscopies.

[2]  Maximilian Haider,et al.  Aberration correction in a low voltage SEM by a multipole corrector , 1995 .

[3]  J. Zach,et al.  Aberration correction and its automatic control in scanning electron microscopes , 2005 .

[4]  Tohru Ishitani,et al.  Evaluation of depth of field in SEM images in terms of the information-passing capacity (IPC) and contrast gradient in SEM image , 2004 .

[5]  E A Kenik,et al.  Detection of Single Atoms and Buried Defects in Three Dimensions by Aberration-Corrected Electron Microscope with 0.5-Å Information Limit , 2008, Microscopy and Microanalysis.

[6]  I. Gestmann,et al.  Extreme High-Resolution SEM: A Paradigm Shift , 2008, Microscopy Today.

[7]  J. E. Barth,et al.  Addition of different contributions to the charged particle probe size , 1996 .

[8]  D. Joy A database on electron‐solid interactions , 2006 .

[9]  O. Scherzer Spharische und chromatische Korrektur von Elektronen-Linsen , 1947 .

[10]  Erik René Kieft,et al.  Refinement of Monte Carlo simulations of electron–specimen interaction in low-voltage SEM , 2008 .

[11]  Mook,et al.  Construction and characterization of the fringe field monochromator for a field emission gun , 2000, Ultramicroscopy.

[12]  R. Young,et al.  In-Situ Sample Preparation and Modeling of SEM-STEM Imaging , 2008, Microscopy and Microanalysis.

[13]  T. Kawasaki,et al.  Developing an aberration-corrected Schottky emission SEM and method for measuring aberration , 2009 .

[14]  I. Müllerová,et al.  Very low energy microscopy in commercial SEMs , 1993 .

[15]  I. Müllerová,et al.  Very Low Energy Scanning Electron Microscopy , 2011 .

[16]  L. Reimer Image Formation in Low-Voltage Scanning Electron Microscopy , 1993 .

[17]  J.-Ch. Kuhr,et al.  Attenuation and escape depths of low-energy electron emission , 2001 .

[18]  D. Joy,et al.  Low Voltage Scanning Electron Microscopy , 2002, Microscopy Today.