Iterative methods in semiconductor device simulation

Abstract A number of Krylov-subspace methods and their applicability to the drift-diffusion equations for semiconductor devices are surveyed. Triangular (non-tensor-product) grids are appropriate for these highly nonsymmetric problems. The role of the underlying discretization is considered, including both the traditional box-method variant of the Scharfetter-Gummel scheme and a new upwinding (streamline-diffusion-like) procedure. Several preconditioners are discussed, including a novel alternate- block-factorization method. Graph coloring is used to enhance performance on vector computers.

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