gm-boosted flat gain UWB low noise amplifier with active inductor-based input matching network

In this paper, an ultra-wideband (UWB) CMOS low noise amplifier (LNA) utilizing an active inductor-based input matching network is presented. The proposed 0.18?m CMOS LNA consists of three stages; a gm-boosted common-gate input stage, a common-source gain stage, and an output buffer. Designed in the 3.1-10.6GHz UWB frequency range, the proposed circuit exhibits a flat forward gain of 12.1?0.7dB, a reverse isolation less than -56.1dB, an input return loss less than -9.5dB, and a noise figure of 4.56-4.7dB over the entire frequency band, while the total power dissipation is 13.6mW under a 1.8V supply. An ultra-wideband (UWB) CMOS low noise amplifier (LNA) utilizing an active inductor-based input matching network is presented.The proposed 0.18?m CMOS LNA consists of three stages; a gm-boosted common-gate input stage, a common-source gain stage, and an output buffer.Designed in the 3.1-10.6GHz UWB frequency range, the proposed circuit exhibits a flat forward gain of 12.1?0.7dB, a reverse isolation less than -56.1dB, an input return loss less than -9.5dB, and a noise figure of 4.56-4.7dB over the entire frequency band, while the total power dissipation is 13.6mW under a 1.8V supply.

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