Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy

Using a new in situ analysis tool, grazing incidence x-ray scattering, we have studied the surface reconstructions present prior to and during growth of ZnSe by organometallic vapor phase deposition. We have established that the GaAs native oxide is chemically reduced by the hydrogen ambient present during pre-growth heating. Following this cleaning procedure, the growth of ZnSe was found to occur in the presence of a p(2x1) reconstruction, characteristic of an array of Se dimers. This new technique can easily be extended to other growth systems.