An optimization of semiconductor film thickness in light-controlled microstrip devices

Abstract The rf-properties of light-controlled microstrip devices using parts of a deposited thin-film semiconducting layer as integrated radiation sensors are dependent not only on the actual microstrip structure but also on the semiconductor properties partly influenced by the incident radiation. Since photoconductivity and rf-properties are very sensitive to the semiconductor film thickness and since, on the other side, the film thickness is a moderate parameter with regard to technological handling, it is possible to find an optimum film thickness yielding maximum photosensitivity and the best possible rf-properties. The basic concept and general computer calculated results are presented.