Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates

Large area growth of 3C-SiC on off-oriented 6H-SiC substrates is demonstrated and the growth evolution is investigated. The structural quality assessed from high-resolution x-ray diffraction omega -rocking curve measurements shows a symmetric peak with a full width at half maximum of 36 arcsec and 2 theta/theta measurements show that the lattice in the grown 3C-SiC is not distorted by using 6H-SiC as a substrate.