论文信息 - Carrier transport in charge-coupled devices

Carrier transport in charge-coupled devices

The transfer characteristics of charge-coupled devices have been studied by considering the transport of carriers at Si-SiO 2 interface. Good agreement between theory and experiment has been achieved by adjusting the surface mobility alone.

C.-K. Kim | C. kim

[1] A. S. Grove,et al. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces , 1965 .

[2] G. E. Smith,et al. Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..