论文信息 - Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling - 字舞流文

Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling

R. Suzuki | N. Kobayashi | I. Sakamoto | K. Kuriyama | T. Mikado | T. Yamazaki | H. Watanabe | Nobuyoshi Hayashi