Single event burnout in DC-DC converters for the LHC experiments

High voltage transistors in DC-DC converters are prone to catastrophic single event burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.

[1]  Philip T. Krein,et al.  Elements of Power Electronics , 1997 .

[2]  J. H. Hohl,et al.  Features of the triggering mechanism for single event burnout of power MOSFETs , 1989 .

[3]  C. F. Wheatley,et al.  Proton-induced dielectric breakdown of power MOSFETs , 1998 .

[4]  E. Normand,et al.  Neutron-induced single event burnout in high voltage electronics , 1997 .

[5]  Ronald D. Schrimpf,et al.  A review of the techniques used for modeling single-event effects in power MOSFETs , 1996 .

[6]  E. Normand,et al.  First observations of power MOSFET burnout with high energy neutrons , 1996 .

[7]  Fred C. Lee,et al.  High-frequency quasi-resonant converter technologies , 1988, Proc. IEEE.

[8]  D. K. Nichols,et al.  Single event gate rupture in commercial power MOSFETs , 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

[9]  F. Faccio,et al.  Computational method to estimate Single Event Upset rates in an accelerator environment , 2000 .

[10]  S. Matsuda,et al.  Mechanism for single-event burnout of power MOSFETs and its characterization technique , 1992 .

[11]  Fred C. Lee,et al.  Evaluation and design of megahertz-frequency off-line zero-current-switched quasi-resonant converters , 1989 .

[12]  A. E. Waskiewicz,et al.  Burnout of Power MOS Transistors with Heavy Ions of Californium-252 , 1986, IEEE Transactions on Nuclear Science.

[13]  C. F. Wheatley,et al.  Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs , 1996 .

[14]  Kenneth F. Galloway,et al.  Simulating single-event burnout of n-channel power MOSFET's , 1993 .