Impact of fin height variations on SRAM yield

We demonstrate that the variation of threshold voltage Vt of bulk finFET (BFF) devices due to the fin height variation (FHV) constitutes the major part of the overall device variations. Yet, the inter-die FHV affects SRAM cell variation performance in quantitatively comparable manner to intra-die variations (or mismatch). At the product level, however the impact of that component on array performance is negligible, demonstrating that mismatch remains dominating the overall statistical SRAM response and upper yield limit.

[1]  R. Rooyackers,et al.  Migrating from planar to FinFET for further CMOS scaling: SOI or bulk? , 2009, 2009 Proceedings of ESSCIRC.

[2]  A. Mercha,et al.  Matching Performance of FinFET Devices With Fin Widths Down to 10 nm , 2009, IEEE Electron Device Letters.

[3]  K. Endo,et al.  Comprehensive analysis of variability sources of FinFET characteristics , 2006, 2009 Symposium on VLSI Technology.

[4]  A. Mercha,et al.  Variability and technology aware SRAM Product yield maximization , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.