Photon‐assisted tunneling in GaAs/AlGaAs superlattices up to room temperature

Photon‐assisted transport is shown to be a remarkably robust phenomenon in sequential resonant superlattices with a large energy separation between the ground state and the first excited state of the quantum wells. Photon‐assisted tunneling involving up to seven photons per tunneling event, stands out very clearly. The one‐photon channel is observed up to 300 K. This implies that these superlattices are a gain medium at THz frequencies even at room temperature and potentially important for the future design of THz sources.