论文信息 - Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices

Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices

The crystalline quality of s.o.s. layers can be improved near the silicon-sapphire interface by silicon implantation followed by recrystallisation. Device performance on such layers is markedly improved as to n-channel m.o.s.t. noise and leakage current, reverse diode current and lateral bipolar transistor gain. Minority-carrier lifetimes up to 50 ns are deduced.

M. Nicolet | I. Golecki | M. Roulet | P. Schwob

[1] T. Sigmon,et al. Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques , 1979 .

[2] J. Fellrath. Shot noise behaviour of subthreshold MOS transistors , 1978 .

[3] S. Kalbitzer,et al. Critical channeling angles of low energy ions in silicon , 1976 .

[4] R. Ronen,et al. Hydrogen Chloride and Chlorine Gettering: An Effective Technique for Improving Performance of Silicon Devices , 1972 .

[5] D. Dumin,et al. Diffused diodes in silicon-on-sapphire , 1968 .