The influence of the selected factors on transient thermal impedance of semiconductor devices

In the paper the method of estimating values of parameters of the compact thermal model of semiconductor devices is described. The input data for this method are the measured waveforms of transient thermal impedance of the investigated device. The output data of the method are: the set of parameters describing the waveform of transient thermal impedance. The usefulness of the presented method is shown for the selected power MOS transistors operating at different cooling conditions.

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