论文信息 - Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions

Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions

Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.

[1] Yuhua Cheng,et al. On the high-frequency characteristics of substrate resistance in RF MOSFETs , 2000, IEEE Electron Device Letters.

[2] M.J. Deen,et al. MOSFET modeling for RF IC design , 2005, IEEE Transactions on Electron Devices.

[3] Guo-Wei Huang,et al. Extraction of substrate parameters for RF MOSFETs based on four-port measurement , 2005 .

[4] In Man Kang,et al. Extraction of $\pi$-Type Substrate Resistance Based on Three-Port Measurement and the Model Verification up to 110 GHz , 2007, IEEE Electron Device Letters.

[5] Hyungcheol Shin,et al. Gate bias dependence of the substrate signal coupling effect in RF MOSFETs , 2003, IEEE Electron Device Letters.

[6] J.A.M. Geelen,et al. An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[7] Hyungcheol Shin,et al. A simple and accurate method for extracting substrate resistance of RF MOSFETs , 2002 .

[8] S. H. Jen,et al. Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[9] Yuhua Cheng,et al. Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs , 2002, IEEE Electron Device Letters.