An SiC MESFET-Based MMIC Process

A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIM capacitors, spiral inductors, thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier at 3 GHz, a high-linearity S-band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter

[1]  Robert J. Trew.  Experimental and Simulated Results of SiC Microwave Power MESFETs , 1997 .

[2]  K. Fujii,et al.  A compact S-band MMIC high power amplifier module , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[3]  R. A. Sadler,et al.  SiC MESFET hybrid amplifier with 30-W output power at 10 GHz , 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

[4]  Herbert Zirath,et al.  Integration of components in a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphicIn0.65Ga0.35As channel , 2004 .

[5]  Robert J. Trew,et al.  Wide bandgap semiconductor transistors for microwave power amplifiers , 2000 .

[6]  Inder J. Bahl.  10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process , 2003 .

[7]  M. Vice.  A 0.5-3 GHz high linearity enhancement mode pHEMT mixer with square wave drive and sum terminating diplexer , 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

[8]  J. Palmour,et al.  Applications of SiC MESFETs and GaN HEMTs in power amplifier design , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[9]  M. Sudow,et al.  A highly linear double balanced Schottky diode S-band mixer , 2006, IEEE Microwave and Wireless Components Letters.

[10]  H. Zirath,et al.  Resistive SiC-MESFET mixer , 2002, IEEE Microwave and Wireless Components Letters.

[11]  J. P. Mondal,et al.  An Experimental Verification of a Simple Distributed Model of MIM Capacitors for MMIC Applications , 1987 .

[12]  H. Zirath,et al.  Planar sic schottky diodes for MMIC applications , 2004, 34th European Microwave Conference, 2004..

[13]  H. Zirath,et al.  Fabrication and characterization of field-plated buried-gate SiC MESFETs , 2006, IEEE Electron Device Letters.

[14]  A.W. Morse,et al.  S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE , 2004, IEEE Transactions on Electron Devices.

[15]  C. Fazi,et al.  Wide dynamic range RF mixers using wide-bandgap semiconductors , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[16]  V. Tilak,et al.  High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).