The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.

[1]  Zhenqiang Ma,et al.  Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs , 2006, IEEE Transactions on Nuclear Science.

[2]  J. Babcock,et al.  Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD , 1995 .

[3]  F. Campabadal,et al.  Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects , 2009, IEEE Transactions on Nuclear Science.

[5]  B. Ricco,et al.  A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[6]  Peter Ashburn,et al.  Silicon‐Germanium Heterojunction Bipolar Transistors , 2004 .

[7]  Yinlong Lu,et al.  Comprehensive test stand for high-intensity cyclotron development , 2011 .

[8]  D. Knoll,et al.  Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications , 2011 .

[9]  R. Reed,et al.  The effects of operating bias conditions on the proton tolerance of SiGe HBTs , 2003 .

[10]  The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology , 2011 .

[11]  M. Reisch,et al.  Emitter series resistance from open-collector measurements-influence of the collector region and the parasitic pnp transistor , 1998 .

[12]  R.D. Isaac,et al.  Effect of emitter contact on current gain of silicon bipolar devices , 1980, IEEE Transactions on Electron Devices.

[13]  Marty R. Shaneyfelt,et al.  Implications of radiation-induced dopant deactivation for npn bipolar junction transistors , 2000 .