Microwave nonlinear device modelling by using an artificial neural network

An approach for the microwave nonlinear device modelling technique based on a combination of the conventional equivalent circuit model and artificial neural network (ANN) is presented in this paper. The main advantage of the proposed method is that the integration and differential of an ANN can directly be carried out from the original ANN. The proposed technique is very useful for neural-based microwave computer-aided design, and for analytically unified dc, small signal and nonlinear device modelling. Examples of the Schottky diode and PHEMT linear/nonlinear modelling utilizing the proposed integration and differential technique are demonstrated.

[1]  A. J. McCamant,et al.  An improved GaAs MESFET model for SPICE , 1990 .

[2]  Qi-Jun Zhang,et al.  Artificial neural networks for RF and microwave design - from theory to practice , 2003 .

[3]  R.A. Pucel,et al.  GaAs FET device and circuit simulation in SPICE , 1987, IEEE Transactions on Electron Devices.

[4]  Hong Wang,et al.  A submicron PHEMT nonlinear model suitable for RFID low current amplifier design , 2003 .

[5]  David E. Root,et al.  Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data , 1991, 1991 21st European Microwave Conference.

[6]  C. Pantaleon,et al.  Smoothing the canonical piecewise-linear model: an efficient and derivable large-signal model for MESFET/HEMT transistors , 2001 .

[7]  W. R. Curtice,et al.  A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.

[8]  Naofumi Okubo,et al.  Structural determination of multilayered large-signal neural-network HEMT model , 1998 .

[9]  M. Fernandez-Barciela,et al.  Direct extraction of nonlinear FET Q-V functions from time domain large signal measurements , 2000 .

[10]  Lei Zhang,et al.  Nonlinear HEMT Modeling Using Artificial Neural Network Technique , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[11]  T. Itoh,et al.  An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique , 2001 .

[12]  Georg Boeck,et al.  A new method for determination of parasitic capacitances for PHEMTs , 2005 .

[13]  S. A. Maas,et al.  Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysis , 1989 .