论文信息 - Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

The improvement of the dispersion curve of the transconductance frequency, g/sub m/(f), and the decrease in breakdown voltage observed in power MESFETs undergoing accelerated tests is discussed. These changes are thermally activated and are attributed to thermal annealing of surface states. The activation energy, E/sub a/=1.0 eV, can be used to evaluate device reliability. >

[1] P. Ladbrooke,et al. Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies , 1988 .

[2] Marc Rocchi,et al. Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's , 1985 .

[3] C. L. Mouellic,et al. Evidence of detrimental surface effects on GaAs power MESFETs , 1982 .

[4] F. Capasso,et al. A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors , 1982 .

[5] J. Graffeuil,et al. Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization , 1986 .