Bidimensional lifetime control for high-speed low-loss p-i-n rectifiers
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[1] Steven T. Peake,et al. Power semiconductor devices , 1995 .
[2] B.J. Baliga,et al. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers , 1977, IEEE Transactions on Electron Devices.
[3] N. Galster,et al. Proton irradiation for improved GTO thyristors , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
[4] Ferruccio Frisina,et al. Power bipolar transistors with a fast recovery integrated diode , 1996 .
[5] V.A.K. Temple,et al. Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop , 1983, IEEE Transactions on Electron Devices.
[6] M. T. Rahimo,et al. A novel concept for fast recovery diodes having junction charge extraction (JCE) regions , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
[7] Mietek Bakowski,et al. Multiple proton energy irradiation for improved GTO thyristors , 1993 .
[8] S. G. Chamberlain,et al. Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n+-p silicon diodes , 1982, IEEE Transactions on Electron Devices.
[9] K. Shenai,et al. Optimization of the anti-parallel diode in an IGBT module for hard-switching applications , 1997 .
[10] R.P. Love,et al. Localized lifetime control in insulated-gate transistors by proton implantation , 1986, IEEE Transactions on Electron Devices.
[11] Ettore Napoli,et al. Power PiN diode performance improvement through local lifetime control: numerical analysis , 1998, COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358).
[12] Paolo Spirito,et al. Fast power rectifier design using local lifetime and emitter efficiency control techniques , 1999 .
[13] M. Naito,et al. High-speed low-loss p-n diode having a channel structure , 1984, IEEE Transactions on Electron Devices.
[14] Y. Konishi,et al. Optimized local lifetime control for the superior IGBTs , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
[15] Jan Vobecky,et al. Optimization of power diode characteristics by means of ion irradiation , 1996 .
[16] F. Frisina,et al. Innovative localized lifetime control in high-speed IGBTs , 1997, IEEE Electron Device Letters.
[17] Y. Minami,et al. 4.5 kV high-speed and rugged planar diode with novel carrier distribution control , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
[18] Paolo Spirito,et al. Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design , 1999 .
[19] F. Sawitzki,et al. Improved recovery of fast power diodes with self-adjusting p emitter efficiency , 1989, IEEE Electron Device Letters.
[20] F. Robb,et al. Increasing the switching speed of high-voltage IGBTs , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.