论文信息 - Piezoresistive properties of polysilicon films

Piezoresistive properties of polysilicon films

Abstract A simple theoretical model for calculating the longitudinal, transverse and shear gauge factors of highly doped polycrystalline silicon films is presented. The calculation of the gauge factors is performed in terms of the elastoresistance and stiffness coefficients of monocrystalline silicon. The results for the longitudinal and transverse gauge factors are given in analytical form for 〈100〉, 〈110〉 and 〈111〉 films. Boron-doped polycrystalline silicon films have been investigated in the temperature range −190 to +300°C and the concentration range 7 × 1019–1 × 1020 cm−3. The presented theory is helpful for polycrystalline transducer designers.

Victor A. Gridchin | V. M. Lubimsky | V. Gridchin | M. P. Sarina | M. Sarina

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