Semiconductor memory device and method of manufacturing the same

PURPOSE: A semiconductor memory device and a method of manufacturing the same are provided to prevent a source line bouncing phenomenon by forming a wide area of a source contact plug. CONSTITUTION: A plurality of memory blocks is divided by a slit(110). A plurality of bit lines(BL) is connected to each string of the memory blocks. The plurality of bit lines is arranged on the top of the memory blocks. A source contact plug(131) is connected to a source region through the inside of the slit. The source contact plug is arranged to be crossed with the plurality of bit lines.