论文信息 - Photoreflectance of GaAs doping superlattices

Photoreflectance of GaAs doping superlattices

Photoreflectance of GaAs doping superlattices has been measured at 300K. The spectra exhibits features corresponding to spatially direct transitions due to quantized electron or hole states. We demonstrate the utility of the photoreflectance technique for studying quantum size effects in doping superlattices.

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