Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
暂无分享,去创建一个
M. Kobayashi | Jiezhi Chen | Jixuan Wu | Xuepeng Zhan | Guoqing Zhao | Xiaolei Wang | Lu Tai | Xiaopeng Li
[1] Zheng Wang,et al. Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling , 2023, IEEE Transactions on Device and Materials Reliability.
[2] M. Kobayashi,et al. Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms , 2022, 2022 International Electron Devices Meeting (IEDM).
[3] M. H. Lee,et al. Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance , 2022, 2022 International Electron Devices Meeting (IEDM).
[4] Zhitang Song,et al. In-situ atomic-level observation of reversible first-order transition in Hf0.5 Zr0.5 O₂ ferroelectric film , 2022, 2022 International Electron Devices Meeting (IEDM).
[5] Liang Zhao,et al. Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering , 2022, IEEE Electron Device Letters.
[6] Pin-Jiun Wu,et al. Enhanced Reliability, Switching Speed and Uniformity for Ferroelectric HfZrOx on Epitaxial Ge Film by Post Deposition Annealing for Oxygen Vacancy Control , 2022, IEEE Transactions on Electron Devices.
[7] Zhitang Song,et al. Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2 ferroelectric film with in-situ rapid thermal annealing , 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
[8] K. Ni,et al. Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection , 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
[9] Y. Morita,et al. Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment , 2022, Japanese Journal of Applied Physics.
[10] Y. Liu,et al. HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability , 2022, IEEE Electron Device Letters.
[11] J. Bi,et al. Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption , 2022, IEEE Transactions on Electron Devices.
[12] Sharadindu Gopal Kirtania,et al. BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry , 2021, 2021 IEEE International Electron Devices Meeting (IEDM).
[13] E. Tsymbal,et al. Defects in ferroelectric HfO2. , 2021, Nanoscale.
[14] S. Jeon,et al. Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors , 2021, Journal of Applied Physics.
[15] Ming Liu,et al. 105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications , 2021, 2021 Symposium on VLSI Technology.
[16] Rong Huang,et al. In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase , 2021, 2021 Symposium on VLSI Technology.
[17] T. Saraya,et al. A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process , 2020, Applied Physics Letters.
[18] H. Lv,et al. Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations , 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
[19] H. Lv,et al. Wake‐Up Effect in HfO2‐Based Ferroelectric Films , 2020, Advanced Electronic Materials.
[20] I. Fina,et al. Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2 , 2020, Applied Physics Letters.
[21] Qi Liu,et al. A highly CMOS compatible hafnia-based ferroelectric diode , 2020, Nature Communications.
[22] T. Mikolajick,et al. Material perspectives of HfO2-based ferroelectric films for device applications , 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
[23] S. Slesazeck,et al. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating , 2019, IEEE Electron Device Letters.
[24] Jaebeom Lee,et al. Stress-Induced Crystallization of Thin Hf1- XZr XO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications. , 2019, ACS applied materials & interfaces.
[25] Jiyoung Kim,et al. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances , 2018, JOM.
[26] Qi Liu,et al. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films , 2018, IEEE Electron Device Letters.
[27] Jin-Woo Han,et al. System On Microheater for On-Chip Annealing of Defects Generated by Hot-Carrier Injection, Bias Temperature Instability, and Ionizing Radiation , 2016, IEEE Electron Device Letters.
[28] Thomas Mikolajick,et al. Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films , 2016 .
[29] Stefan Slesazeck,et al. Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors , 2016 .
[30] Uwe Schroeder,et al. Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films. , 2016, ACS applied materials & interfaces.
[31] Sergei V. Kalinin,et al. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories , 2013, 2013 IEEE International Electron Devices Meeting.
[32] Yi-Hsuan Hsiao,et al. Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage , 2012, 2012 International Electron Devices Meeting.
[33] U. Böttger,et al. Ferroelectricity in hafnium oxide thin films , 2011 .
[34] Lothar Frey,et al. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications , 2011 .
[35] T. Noh,et al. Domain switching kinetics in disordered ferroelectric thin films. , 2007, Physical review letters.