Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair

To achieve HfO2-based ferroelectric (FE) devices with robust reliabilities, the impacts of re-annealing on 7nm FE-Hf<inline-formula> <tex-math notation="LaTeX">$_{{0}.{5}}$ </tex-math></inline-formula>Zr0.5O2 (HZO) capacitors are comprehensively studied in this work. Impressively, the re-initialization phenomenon can be clearly observed by re-annealing cycled HZO capacitors. It is found that FE properties (remanent polarization (Pr), coercive electric field (<inline-formula> <tex-math notation="LaTeX">$\text{E}_{\text {C}}{)}$ </tex-math></inline-formula>, polarization switching speed, wakeup/fatigue effect, and symmetry) can be obviously improved after re-annealing. With in-depth discussions, it is considered that temperature-dependent phase transition and non-switchable region repairing could be the dominant mechanisms. Our results indicate that re-annealing could effectively improve FE-HZO performance and shed light on reliability optimizations.

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