论文信息 - Performance simulation of nanoscale silicon rod field-effect transistor logic

Performance simulation of nanoscale silicon rod field-effect transistor logic

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.

Chris Dwyer | Russell M. Taylor | Leandra Vicci | C. Dwyer | L. Vicci

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