论文信息 - Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates - 字舞流文

Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

J. J. Kim | David J. Smith | A. Savage | T. Myers | J. Dinan | J. Chai | O. C. Noriega | C. Smith | K. Doyle | A. Dedigama | N. Chau | J. Pena