Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration

The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

[1]  Pengfei Sun,et al.  Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules , 2016, IEEE Transactions on Power Electronics.

[2]  Nick Baker,et al.  IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current , 2017, IEEE Transactions on Power Electronics.

[3]  Frede Blaabjerg,et al.  Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swing , 2020, IEEE Transactions on Power Electronics.

[4]  Bing Ji,et al.  Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules , 2019, IEEE Transactions on Power Electronics.

[5]  Stig Munk-Nielsen,et al.  Online Vce measurement method for wear-out monitoring of high power IGBT modules , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[6]  Bongtae Han,et al.  Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review , 2015, IEEE Transactions on Power Electronics.

[7]  Du Mingxing,et al.  Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module , 2014, IEEE Transactions on Device and Materials Reliability.

[8]  Huai Wang,et al.  Prediction of bond wire fatigue of IGBTs in a PV inverter under long-term operation , 2015, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

[9]  Bo Wang,et al.  Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-Circuit Current Identification , 2017, IEEE Transactions on Power Electronics.

[10]  F. Pfirsch,et al.  Limiting Factors of the Safe Operating Area for Power Devices , 2013, IEEE Transactions on Electron Devices.

[11]  W. G. Hurley,et al.  Strategy for Diagnosing the Aging of an IGBT Module by ON-State Voltage Separation , 2019, IEEE Transactions on Electron Devices.

[12]  A. Singh,et al.  Evaluation of Vce at Inflection Point for Monitoring Bond Wire Degradation in Discrete Packaged IGBTs , 2017, IEEE Transactions on Power Electronics.

[13]  V. Pickert,et al.  Localization and Detection of Bond Wire Faults in Multichip IGBT Power Modules , 2020, IEEE Transactions on Power Electronics.

[14]  S. Bernet,et al.  Estimation and measurement of junction temperatures in a three-level voltage source converter , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[15]  C Mark Johnson,et al.  Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.

[16]  Volker Pickert,et al.  Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating , 2018, IEEE Transactions on Power Electronics.

[17]  Wei Qiao,et al.  An Online Frequency-Domain Junction Temperature Estimation Method for IGBT Modules , 2015, IEEE Transactions on Power Electronics.

[18]  Frede Blaabjerg,et al.  Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules , 2017, IEEE Transactions on Power Electronics.

[19]  Mohd. Amir Eleffendi,et al.  In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages , 2017, IEEE Transactions on Power Electronics.

[20]  Fan Yang,et al.  A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module , 2017, IEEE Transactions on Power Electronics.

[21]  Stig Munk-Nielsen,et al.  Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules , 2014, IEEE Industrial Electronics Magazine.

[22]  Nick Baker,et al.  IGBT Junction Temperature Measurement via Peak Gate Current , 2016, IEEE Transactions on Power Electronics.

[23]  Bing Ji,et al.  In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives , 2013, IEEE Transactions on Power Electronics.

[24]  C. Mark Johnson,et al.  Application of Kalman Filter to Estimate Junction Temperature in IGBT Power Modules , 2016, IEEE Transactions on Power Electronics.

[25]  Xiong Du,et al.  Monitoring Bond Wire Defects of IGBT Module Using Module Transconductance , 2021, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[26]  Hui Huang,et al.  A Lifetime Estimation Technique for Voltage Source Inverters , 2013, IEEE Transactions on Power Electronics.

[27]  Frédéric Richardeau,et al.  Evaluation of $V_{\rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling , 2013, IEEE Transactions on Industrial Electronics.