A very low-noise single-electron electrometer of stacked-junction geometry

Abstract An Al single-electron electrometer of stacked design was studied. The manufacturing technique chosen ensured that there was no direct contact between the transistor island and dielectric substrate. The noise figure of the transistor was found to be exceptionally low: δQ x ≈(8±2)×10 −6 e/ Hz at f= 10 Hz.

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