A technique to predict gate oxide reliability using fast on-line ramped Q/sub BD/ testing
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[1] Prasad Chaparala,et al. Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/ , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.
[2] Feng Li,et al. The sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR , 1999, 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460).
[3] E. S. Snyder,et al. Detecting breakdown in ultra-thin dielectrics using a fast voltage ramp , 1999, 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460).
[4] R. Degraeve,et al. Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures? , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).
[5] John S. Suehle,et al. TDDB characterisation of thin SiO/sub 2/ films with bimodal failure populations , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.
[6] Prasad Chaparala,et al. The correlation of highly accelerated Q/sub bd/ tests to TDDB life tests for ultra-thin gate oxides , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).