论文信息 - Aging simulation of SiC-MOSFET in DC-AC converter

Aging simulation of SiC-MOSFET in DC-AC converter

This investigation focuses on the aging simulation of a DC-AC converter during the stress situation of a lightning strike. The newly developed compact model HiSIM_HSiC for high-voltage SiC MOSFETs, which considers the carrier-trap increase, is applied for the simulation. Simulation results reproduce the measured converter characteristics during the conventional earth fault protection of the DC-AC converter. It is verified that the device aging occurs in spite of this protection. The modeled device aging after the converter has endured several lightning strikes predicts enhanced efficiency reduction by more than 10% in addition to the ordinary usage.

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