论文信息 - Reliability investigation in SiGe HBT's

Reliability investigation in SiGe HBT's

This paper addresses some reliability properties of SiGe HBTs. We first verified that no major problems were related to the SiGe layer through DC life tests. In the second step, we investigated the hot carrier influence on the DC, noise and microwave properties of these devices. We found that some degradation was occurring at the extrinsic base region in the vicinity of the emitter associated with some surface recombination. These assumptions have been described by physical simulations and confirmed by low frequency noise characterization. Finally, it has been demonstrated that microwave properties are affected by the mechanism and we propose a bias method that results in its minimization.

[1] J.M. Ford,et al. Comparison of time-to-failure of GeSi and Si bipolar transistors , 1996, IEEE Electron Device Letters.

[2] J. Graffeuil,et al. Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs , 2001 .

[3] Gerard Ghibaudo,et al. ON NOISE SOURCES IN HOT ELECTRON-DEGRADED BIPOLAR JUNCTION TRANSISTORS , 1997 .

[4] John D. Cressler,et al. Hot electron and hot hole degradation of UHV/CVD SiGe HBT's , 2000 .

[5] peixiong zhao,et al. Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs , 1995 .

[6] Chih-Tang Sah,et al. Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress , 1996 .

[7] G. Freeman,et al. Device Reliability and Repeatability of a High Performance Si/SiGe HBT BiCMOS Technology , 1998, 28th European Solid-State Device Research Conference.

[8] Andrea Neviani,et al. Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications , 2000 .

[9] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[10] Donald Y. C. Lie,et al. Si/SiGe heterostructures for Si-based nanoelectronics , 2001 .