Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

AbstractWe report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011 cmHz1/2/W and the quantum efficiency of 41% at 3.6 μm were obtained. PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.

[1]  W. E. Tennant,et al.  LWIR high performance focal plane arrays Based on type-II strained layer superlattice (SLS) materials , 2010, Defense + Commercial Sensing.

[2]  H. Ehrenreich,et al.  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes , 1995 .

[3]  Elena Plis,et al.  Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures , 2007, SPIE Defense + Commercial Sensing.

[4]  Antoni Rogalski,et al.  Material considerations for third generation infrared photon detectors , 2007 .

[5]  Arezou Khoshakhlagh,et al.  Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (̃8 μm) infrared detection , 2009 .

[6]  Sarath D. Gunapala,et al.  Progress with type-II superlattice IR detector arrays , 2007, SPIE Defense + Commercial Sensing.

[7]  Frank Fuchs,et al.  Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors , 2003, SPIE OPTO.

[8]  Yajun Wei,et al.  Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs , 2003, SPIE ITCom.

[9]  Darryl L. Smith,et al.  Proposal for strained type II superlattice infrared detectors , 1987 .

[10]  Jerry R. Meyer,et al.  AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES , 1994 .

[11]  Arthur C. Gossard,et al.  Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb , 1996 .

[12]  Alexander Soibel,et al.  Demonstration of 1Kx1K long-wave and mid-wave superlattice infrared focal plane arrays , 2010, Optical Engineering + Applications.

[13]  L. Esaki,et al.  A new semiconductor superlattice , 1977 .