Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (3 1 1)B GaAs by MOCVD

We have investigated some characteristics of highly strained GaInAs/GaAs quantum wells grown on GaAs (311)B substrate by metal organic chemical vapor deposition (MOCVD) for the enhancement of polarization stabilities of vertical-cavity surface-emitting lasers (VCSELs). Quantum wells (QWs) with an In composition of over 30% have been grown without any degradation in crystal properties. We have achieved an emission wavelength of 1.16 μm (In = 35%) with a full-width at half-maximum of 20meV and found that the optical intensity anisotropy between the orthogonal directions of [233] and [011] was increased to be 50% for QWs with 33% In.

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