Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon
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D. Sentenac | A. Macchiolo | C. Piemonte | D. Creanza | M. Palma | N. Manna | E. Focardi | A. Messineo | L. Borrello | M. Bruzzi | G. Betta | M. Boscardin | N. Zorzi | G. Segneri | V. Radicci | D. Menichelli | M. Scaringella | S. Ronchin
[1] D. Bisello,et al. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon , 2005 .
[2] Marina Artuso,et al. Radiation-hard semiconductor detectors for SuperLHC , 2005 .
[3] S. Stapnes,et al. Physics potential and experimental challenges of the LHC luminosity upgrade , 2002, hep-ph/0204087.
[4] M. Bruzzi,et al. Anomalous current transients related to defect discharge in irradiated silicon diodes , 2004 .
[5] J. Heikonen,et al. Simulation of large-scale silicon melt flow in magnetic Czochralski growth , 2002 .
[6] P. Ciampolini,et al. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration , 2001 .
[7] Eckhart Fretwurst,et al. Leakage current of hadron irradiated silicon detectors - material dependence , 1999 .
[8] H. Kraner,et al. Study of the long term stability of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes , 1994, Proceedings of 1994 IEEE Nuclear Science Symposium - NSS'94.