High step down ratio (400 V to 1 V) phase shift full bridge DC/DC converter for data center power supplies with GaN FETs

Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase shift full bridge (PSFB) DC/DC converter with high step down ratio (66:1) is built with Gallium Nitride (GaN) FETs targeting at high efficiency. This paper mainly focuses on the study of a single 66 V to 1 V converter. Prototypes of the PSFB converter is designed, built, and tested. Preliminary experimental results are provided to verify the design.

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