Ultra-energy-efficient analog-to-digital converters based on single-electron transistor/CMOS hybrid technology for biomedical applications

Ultra-energy-efficient analog-to-digital converters (ADCs) based on single-electron transistor (SET)/complementary metal-oxide-semiconductor (CMOS) hybrid technology are proposed as a solution to sense and process biomedical signals. Our results show the energy efficiency of 0.82 pJ/state, which is lower than that in previously reported energy-efficient ADCs. The performance and dissipated power of proposed ADCs are estimated and compared with those of CMOS ADCs by using Lee's SPICE model including non-ideal effects of the experimental data. While the proposed ADC shows an operating power lower by two orders of magnitude than that of the CMOS flash-type ADC, the number of required transistors is about 10% of that in the CMOS flash-type ADC. The peak-to-valley current ratio in Coulomb oscillation of SETs used in the circuit implementation has the range of 1.15–1.5, which is consistent with the experimental result of top-down approached Si-based SETs at T = 77–100 K. From the perspective of the immunity to the gate capacitance Ccg mismatch and the background charge Q0 noise, it is shown that the criteria of SET/CMOS hybrid ADCs are ΔCcg ≤ 0.02 × Ccg (with Ccg = 0.24 aF) and ΔQ0 ≤ 0.23q, respectively.

[1]  S. Mahapatra,et al.  Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design , 2004, IEEE Transactions on Electron Devices.

[2]  M. Vinet,et al.  Simple and controlled single electron transistor based on doping modulation in silicon nanowires , 2006 .

[3]  Ken Uchida,et al.  Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation , 2003 .

[4]  Jens Sauerbrey,et al.  A 0.5-V 1-μW successive approximation ADC , 2003, IEEE J. Solid State Circuits.

[5]  C. Sathe,et al.  Assessment of SET Logic Robustness Through Noise Margin Modeling , 2008, IEEE Transactions on Electron Devices.

[6]  Nan-Jian Wu,et al.  Compact universal logic gates realized using quantization of current in nanodevices , 2007, Nanotechnology.

[7]  Nanjian Wu,et al.  Analog– Digital and Digital– Analog Converters Using Single-Electron and MOS Transistors , 2005 .

[8]  Lars Samuelson,et al.  Semiconductor nanowires for novel one-dimensional devices , 2004 .

[9]  Byung-Gook Park,et al.  Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor , 2002 .

[10]  Su Jin Ahn,et al.  Asynchronous analogue-to-digital converter for single-electron circuits , 1998 .

[11]  Jianfei Jiang,et al.  Analog-to-digital converter based on single-electron tunneling transistors , 2004, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[12]  Hiroshi Inokawa,et al.  Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor , 2006 .

[13]  A.M. Ionescu,et al.  A quasi-analytical SET model for few electron circuit simulation , 2002, IEEE Electron Device Letters.

[14]  Dong Myong Kim,et al.  Design of a Robust Analog-to-Digital Converter Based on Complementary SET/CMOS Hybrid Amplifier , 2007, IEEE Transactions on Nanotechnology.

[15]  Ki-Whan Song,et al.  SET/CMOS hybrid process and multiband filtering circuits , 2005 .

[16]  Yasuo Takahashi,et al.  Single-electron-based flexible multivalued logic gates , 2008 .

[17]  Z. Yao,et al.  Room-temperature single-electron transistors using alkanedithiols , 2007, Nanotechnology.

[18]  H. Inokawa,et al.  A compact analytical model for asymmetric single-electron tunneling transistors , 2003 .

[19]  Rahul Sarpeshkar,et al.  A Bio-Inspired Ultra-Energy-Efficient Analog-to-Digital Converter for Biomedical Applications , 2006, IEEE Transactions on Circuits and Systems I: Regular Papers.

[20]  Byung-Gook Park,et al.  Single-electron transistors based on gate-induced Si island for single-electron logic application , 2002 .

[21]  Konstantin K. Likharev,et al.  Single-electron devices and their applications , 1999, Proc. IEEE.

[22]  Frederic Boeuf,et al.  Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors , 2003 .

[23]  Lars Samuelson,et al.  Single-electron transistors in heterostructure nanowires. , 2003 .

[24]  Haikuo Li,et al.  Single-electron transistors with point contact channels , 2002 .

[25]  Siegfried Selberherr,et al.  SIMON-A simulator for single-electron tunnel devices and circuits , 1997, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[26]  Jeong-Taek Kong,et al.  CAD for nanometer silicon design challenges and success , 2004, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[27]  Kristofer S. J. Pister,et al.  An ultralow-energy ADC for Smart Dust , 2003, IEEE J. Solid State Circuits.

[28]  Byung-Gook Park,et al.  A practical SPICE model based on the physics and characteristics of realistic single-electron transistors , 2002 .

[29]  Yun Seop Yu,et al.  Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor , 2008, IEEE Transactions on Nanotechnology.

[30]  Heemin Y. Yang A time-based energy-efficient analog-to-digital converter , 2005, IEEE Journal of Solid-State Circuits.

[31]  P. Couturier Japan , 1988, The Lancet.

[32]  J. Gilman,et al.  Nanotechnology , 2001 .

[33]  Adolfo Steiger-Garção,et al.  Low-power low-voltage CMOS A/D sigma-delta modulator for bio-potential signals driven by a single-phase scheme , 2005, IEEE Transactions on Circuits and Systems I: Regular Papers.

[34]  Peyman Servati,et al.  Room temperature single electron charging in single silicon nanochains , 2008 .

[35]  K. Matsuzawa,et al.  Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits , 2000 .

[36]  Yun Seop Yu,et al.  Equivalent circuit approach for single electron transistor model for efficient circuit simulation by SPICE , 2002 .

[37]  Z. Krivokapic,et al.  Complimentary single-electron/hole action of nanoscale SOI CMOS transistors , 2004, IEEE Electron Device Letters.

[38]  D. M. Kim,et al.  Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors , 2002 .

[39]  Hiroshi Inokawa,et al.  Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET , 2006 .

[40]  M. Meyyappan,et al.  Nanotechnology: Role in emerging nanoelectronics , 2006 .