Modelling radiation-effects and annealing in semiconductor lasers for use in future particle physics experiments

Optical link components used in future particle physics experiments will typically be exposed to intense radiation fields during the lifetime of the experiment and the qualification of these components in terms of radiation tolerance is thus required. We have created a model that describes the degradation of the L-I characteristic of a semiconductor laser undergoing irradiation with the annealing processes taken into account. This model can be used to predict the behaviour of a laser being irradiated with the different particle fluxes at different locations inside a particle physics experiment. The robustness of the model has been checked against the experimental data obtained during high-fluence (in excess of 1015 particles/cm2) neutron and pion irradiation testing in 2009 and 2010.