论文信息 - Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles - 字舞流文

Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles

K. Nielsch | D. Pohl | Christoph W. Wiegand | B. Rellinghaus | R. Zierold | René Faust | Andy Thomas