History of Semiconductor Research
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[1] Carl Wagner,et al. Theorie der geordneten Mischphasen. II. , 1931 .
[2] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .
[3] R. N. Dexter,et al. Anisotropy of cyclotron resonance in germanium , 1954 .
[4] C. Gallagher,et al. Plastic Deformation of Germanium and Silicon , 1952 .
[5] W. Shockley,et al. Density of Surface States on Silicon Deduced from Contact Potential Measurements , 1947 .
[6] W. V. Roosbroeck,et al. The Transport of Added Current Carriers in a Homogeneous Semiconductor , 1953 .
[7] Conyers Herring,et al. Theory of the Thermoelectric Power of Semiconductors , 1954 .
[8] G. L. Pearson,et al. Magneto-resistance effect and the band structure of single crystal silicon , 1954 .
[9] William Shockley,et al. The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..
[10] G. L. Pearson,et al. Correlation of Geiger Counter and Hall Effect Measurements in Alloys Containing Germanium and Radioactive Antimony 124 , 1950 .
[11] H. B. Briggs. Optical Effects in Bulk Silicon and Germanium , 1950 .
[12] H. Y. Fan,et al. Optical Properties of Semiconductors. II. Infra-Red Transmission of Germanium , 1949 .
[13] F. Herman. Calculation of the Energy Band Structures of the Diamond and Germanium Crystals by the Method of Orthogonalized Plane Waves , 1954 .
[14] R. N. Hall,et al. P−NJunctions Prepared by Impurity Diffusion , 1950 .
[15] William Shockley,et al. The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .
[16] W. Brown,et al. ANNEALING OF BOMBARDMENT DAMAGE IN GERMANIUM: EXPERIMENTAL , 1953 .
[17] Conyers Herring. Theory of transient phenomena in the transport of holes in an excess semiconductor , 1949, Bell Syst. Tech. J..
[18] K. B. McEachron,et al. Thyrite A New Material for Lightning Arresters , 1930, Transactions of the American Institute of Electrical Engineers.
[19] G. Dresselhaus,et al. Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals , 1955 .
[20] R. A. Smith. The electronic and optical properties of the lead sulphide group of semi-conductors , 1954 .
[21] M. Tanenbaum,et al. Recent work on group III antimonides and arsenides , 1954 .
[22] G. L. Pearson,et al. Hyperfine Splitting in Spin Resonance of Group V Donors in Silicon , 1954 .
[23] G. L. Pearson,et al. Silicon P-N Junction Alloy Diodes , 1952, Proceedings of the IRE.
[24] Conyers Herring,et al. Transport properties of a many-valley semiconductor , 1955 .
[25] E. Buehler,et al. Growth of Germanium Single Crystals Containingp−nJunctions , 1951 .
[26] C. S. Fuller,et al. Diffusion of Boron and Phosphorus into Silicon , 1954 .
[27] L. O. Grondahl,et al. A new electronic rectifier , 1927, Journal of the A.I.E.E..
[28] W. Vogt. Elektrisches und optisches Verhalten von Halbleitern. III Elektrische Messungen an Kupferoxydul , 1930 .
[29] R. Prim,et al. Some results concerning the partial differential equations describing the flow of holes and electrons in semiconductors , 1951 .
[30] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[31] G. L. Pearson,et al. The Magneto-Resistance Effect in Oriented Single Crystals of Germanium , 1951 .
[32] G. L. Pearson,et al. Dislocations in Plastically Deformed Germanium , 1954 .
[33] W. Read. LXXXVII. Theory of dislocations in germanium , 1954 .
[34] W. C. Elmore,et al. Temperature Dependence of Scintillations in Sodium Iodide Crystals , 1949 .
[35] R. N. Hall,et al. Power Rectifiers and Transistors , 1952, Proceedings of the IRE.
[36] Walter E. Meyerhof,et al. Contact Potential Difference in Silicon Crystal Rectifiers , 1947 .
[37] William Shockley,et al. p − n Junction Transistors , 1951 .
[38] R. Pohl. Electron conductivity and photochemical processes in alkali-halide crystals , 1937 .
[39] E. Hall. On a new Action of the Magnet on Electric Currents , 1879 .
[40] W. Schottky,et al. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter , 1939 .
[41] W. Brattain,et al. Surface Properties of Semiconductors. , 1957, Science.
[42] G. L. Pearson,et al. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus , 1949 .
[43] W. G. Pfann,et al. Observations of Dislocations in Lineage Boundaries in Germanium , 1953 .
[44] R. Hall. Electron-Hole Recombination in Germanium , 1952 .
[45] Victor F. Weisskopf,et al. Theory of Impurity Scattering in Semiconductors , 1950 .
[46] F. J. Morin,et al. Electrical Properties of Silicon Containing Arsenic and Boron , 1954 .
[47] J. Burton. Impurity centers in Ge and Si , 1954 .
[48] A. Sommerfeld. Zur Elektronentheorie der Metalle auf Grund der Fermischen Statistik: I. Teil: Allgemeines, Strmungs- und Austrittsvorgnge , 1928 .
[49] H. Welker. Semiconducting intermetallic compounds , 1954 .
[50] J. Bardeen. Theory of relation between hole concentration and characteristics of germanium point contacts , 1950 .
[51] E. Engelhard. Elektrisches und optisches Verhalten von Halbleitern. IX. Mechanismus und Ursprung der Dunkelleitung und der lichtelektrischen Leitung in Kupferoxydul , 1933 .
[52] E. Conwell,et al. Electrical Properties of N -Type Germanium , 1954 .
[53] R. Smith,et al. Space-Charge-Limited Currents in Single Crystals of Cadmium Sulfide , 1955 .
[54] Willoughby Smith. The action of light on selenium , 1873 .
[55] J. Bardeen,et al. Physical Principles Involved in Transistor Action , 1949 .
[56] William Shockley,et al. On the Surface States Associated with a Periodic Potential , 1939 .
[57] E. W. Herold. Semiconductors and the transistor , 1955 .
[58] C. S. Fuller,et al. A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power , 1954 .
[59] J. Bardeen,et al. The transistor, a semi-conductor triode , 1948 .
[60] F. S. Goucher.. The Photon Yield of Electron-Hole Pairs in Germanium , 1950 .
[61] F. Morin,et al. Conductivity and Hall Effect in the Intrinsic Range of Germanium , 1954 .
[62] G. L. Pearson,et al. Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges , 1948 .
[63] John S. Saby,et al. Fused Impurity P-N-P Junction Transistors , 1952, Proceedings of the IRE.
[64] N. Mott. The Theory of Crystal Rectifiers , 1939 .
[65] J. Boer,et al. Rotgrenze des inneren photoeffektes und ablösungsarbeit bei halbleitern , 1935 .
[66] Ferdinand Braun,et al. Ueber die Stromleitung durch Schwefelmetalle , 1875 .
[67] C. E. Fritts. On a new form of selenium cell, and some electrical discoveries made by its use , 1883, American Journal of Science.
[68] John Bardeen,et al. Nature of the Forward Current in Germanium Point Contacts , 1948 .
[69] W. J. Pietenpol,et al. Some Circuit Properties and Applications of n-p-n Transistors , 1951, Proceedings of the IRE.