Microstructural and Reliability Issues of TSV

The copper pumping problem exemplifies the complex reliability issues still to be resolved for TSV structures. From a materials science perspective the reliability issues presented by TSVs are linked to manufacturing processes and the resultant microstructure formed. Routine finite element-based reliability studies that treat the TSV filler as an isotropic and homogeneous material are not capable of providing a sufficiently thorough explanation of the observed copper extrusion/intrusion behavior. Rather, the material behavior and properties at multiple scales are required as the input data for effective reliability analysis of three-dimensional TSV stacked ICs. Such 3-D ICs also push the scale of materials to a limit where the anisotropy of material properties, recovery, recrystallization, and time-dependent phase morphological evolution further complicate reliability issues. This chapter reviews both experimental and modeling approaches that address the microstructural and reliability issues of TSVs. Crystal plasticity-based finite element method and phase field crystal method with an inherently multiscale nature are identified as promising modeling techniques to enable atomistically informed reliability analysis of TSVs.

[1]  Qiu Zhao,et al.  Extension of micro-Raman spectroscopy for full-component stress characterization of TSV structures , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[2]  Eric Beyne,et al.  Microstructure simulation of grain growth in Cu Through Silicon Via using phase-field modeling , 2014, 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

[3]  T. Hang,et al.  The Influence of Annealing on Characteristics of Copper in TSV , 2015 .

[4]  Alain C. Diebold,et al.  Applying x-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias , 2011 .

[5]  Tengfei Jiang,et al.  Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias , 2013, Microelectron. Reliab..

[6]  Jongwoo Park,et al.  An experimental study on the TSV reliability: Electromigration (EM) and time dependant dielectric breakdown (TDDB) , 2012, 2012 IEEE International Interconnect Technology Conference.

[7]  S. V. Harren,et al.  Nonuniform deformations in polycrystals and aspects of the validity of the Taylor model , 1989 .

[8]  P. Conway,et al.  Effects of the microstructure of copper through-silicon vias on their thermally induced linear elastic mechanical behavior , 2014, Electronic Materials Letters.

[9]  Anil K. Jain,et al.  Texture Analysis , 2018, Handbook of Image Processing and Computer Vision.

[10]  Cher Ming Tan,et al.  Electromigration performance of Through Silicon Via (TSV) - A modeling approach , 2010, Microelectron. Reliab..

[11]  F. Roters.  Advanced material models for the crystal plasticity finite element method - Development of a general CPFEM framework , 2011 .

[12]  Nikolas Provatas,et al.  Phase-Field Methods in Materials Science and Engineering , 2010 .

[13]  Richard A. Allen,et al.  Metrology needs for through-silicon via fabrication , 2014 .

[14]  Suk-kyu Ryu,et al.  Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique , 2012 .

[15]  J. F. Butler,et al.  Analysis of an aluminum single crystal with unstable initial orientation (001) [110] in channel die compression , 1991 .

[16]  S.-H. Hwang,et al.  Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits , 2012, Microelectron. Reliab..

[17]  P. Heide,et al.  Micro-XRD characterization of a single copper filled through-silicon via , 2015 .

[18]  Martin Grant,et al.  Modeling elasticity in crystal growth. , 2001, Physical review letters.

[19]  J. M. Perlado,et al.  Unraveling the temperature dependence of the yield strength in single-crystal tungsten using atomistically-informed crystal plasticity calculations , 2015, 1506.02224.

[20]  R. Asaro,et al.  Shear band formation in plane strain compression , 1988 .

[21]  C. Sinclair,et al.  Atomistic study of diffusion-mediated plasticity and creep using phase field crystal methods , 2015, 1509.02565.

[22]  T. Pusztai,et al.  Heterogeneous nucleation of/on nanoparticles: a density functional study using the phase-field crystal model. , 2014, Chemical Society reviews.

[23]  Mingwei Chen,et al.  Diffusionally accommodated interfacial sliding in metal-silicon systems , 2003 .

[24]  H. Bunge,et al.  Orientation Stereology— A New Branch in Texture Research** , 2001 .

[25]  Praveen Kumar,et al.  Effect of substrate surface on electromigration-induced sliding at hetero-interfaces , 2013 .

[26]  Bart Vandevelde,et al.  Cu pumping in TSVs: Effect of pre-CMP thermal budget , 2011, Microelectron. Reliab..

[27]  Bart Vandevelde,et al.  Elimination Of The Axial Deformation Problem Of Cu-TSV In 3D Integration , 2010 .

[28]  P. Conway,et al.  A Method for Quantification of the Effects of Size and Geometry on the Microstructure of Miniature Interconnects , 2014, Journal of Electronic Materials.

[29]  N. Provatas,et al.  Multicomponent phase-field crystal model for structural transformations in metal alloys , 2012, 1211.0003.

[30]  E. Beyne,et al.  In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs , 2012, 2012 IEEE 62nd Electronic Components and Technology Conference.

[31]  C. Sinclair,et al.  Phase field crystal modeling as a unified atomistic approach to defect dynamics , 2014, 1403.0601.

[32]  C. Cabral,et al.  Mechanisms for microstructure evolution in electroplated copper thin films near room temperature , 1999 .

[33]  Surya R. Kalidindi,et al.  Materials Data Science: Current Status and Future Outlook , 2015 .

[34]  M. Diehl,et al.  DAMASK: The Düsseldorf Advanced MAterial Simulation Kit for studying crystal plasticity using an FE based or a spectral numerical solver , 2015 .

[35]  J. Dluhoš.  Advances in FIB-SEM Analysis of TSV and Solder Bumps - Approaching Higher Precision, Throughput and Comprehensiveness , 2014 .

[36]  M. Kunz,et al.  On the Mechanical Stresses of Cu Through-Silicon Via (TSV) Samples Fabricated by SK Hynix vs. SEMATECH – Enabling Robust and Reliable 3-D Interconnect/Integrated Circuit (IC) Technology , 2016 .

[37]  S. Kalidindi.  Incorporation of deformation twinning in crystal plasticity models , 1998 .

[38]  Stéphane Moreau,et al.  Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric , 2013, Microelectron. Reliab..

[39]  F. Roters,et al.  Effects of initial orientation, sample geometry and friction on anisotropy and crystallographic orientation changes in single crystal microcompression deformation: A crystal plasticity finite element study , 2007 .

[40]  P. Voorhees,et al.  Controlling crystal symmetries in phase-field crystal models , 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

[41]  E. Beyne,et al.  Correlation between Cu microstructure and TSV Cu pumping , 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).

[42]  C. Okoro,et al.  X-ray micro-beam diffraction measurement of the effect of thermal cycling on stress in Cu TSV: A comparative study , 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).

[43]  Geoffrey Ingram Taylor,et al.  The Mechanism of Plastic Deformation of Crystals. Part II. Comparison with Observations , 1934 .

[44]  M. Grant,et al.  Modeling elastic and plastic deformations in nonequilibrium processing using phase field crystals. , 2003, Physical review. E, Statistical, nonlinear, and soft matter physics.

[45]  N. Provatas,et al.  Structural phase field crystal approach for modeling graphene and other two-dimensional structures , 2016 .

[46]  Praveen Kumar,et al.  Influence of electric current on diffusionally accommodated sliding at hetero-interfaces , 2011 .

[47]  Nikolas Provatas,et al.  Phase field crystal study of deformation and plasticity in nanocrystalline materials. , 2009, Physical review. E, Statistical, nonlinear, and soft matter physics.

[48]  Jae-Seok Yang,et al.  Stress-driven 3D-IC placement with TSV keep-out zone and regularity study , 2010, 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

[49]  W. Wang,et al.  Thermal and spatial dependence of TSV-induced stress in Si , 2011, 2011 IEEE International Interconnect Technology Conference.

[50]  Alan Needleman,et al.  An analysis of nonuniform and localized deformation in ductile single crystals , 1982 .

[51]  K. Barmak,et al.  Effect of downscaling nano-copper interconnects on the microstructure revealed by high resolution TEM-orientation-mapping , 2012, Nanotechnology.

[53]  N. Provatas,et al.  Modeling structural transformations in binary alloys with phase field crystals , 2011 .

[54]  B. Verlinden,et al.  Influence of annealing conditions on the mechanical and microstructural behavior of electroplated Cu-TSV , 2010 .

[55]  E. Beyne,et al.  Impact of post-plating anneal and through-silicon via dimensions on Cu pumping , 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

[56]  Julia R. Greer,et al.  Deformation at the nanometer and micrometer length scales: Effects of strain gradients and dislocation starvation , 2007 .

[57]  R. Tummala,et al.  Thermo-mechanical behavior of through silicon vias in a 3D integrated package with inter-chip microbumps , 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

[58]  Charles H. Ward.  Materials Genome Initiative for Global Competitiveness , 2012 .

[59]  F. Altmann,et al.  Characterization and failure analysis of TSV interconnects: From non-destructive defect localization to material analysis with nanometer resolution , 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

[60]  L. Arnaud,et al.  Electromigration behavior of 3D-IC TSV interconnects , 2012, 2012 IEEE 62nd Electronic Components and Technology Conference.

[61]  G. Stoney.  The Tension of Metallic Films Deposited by Electrolysis , 1909 .

[62]  H. D. Merchant.  Thermal response of electrodeposited copper , 1995 .

[63]  Hong Wang,et al.  Effect of current density on microstructure and mechanical property of Cu micro-cylinders electrodeposited in through silicon vias , 2015 .

[64]  Suk-kyu Ryu,et al.  Impact of material and microstructure on thermal stresses and reliability of through-silicon via (TSV) structures , 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

[65]  C. Sinclair,et al.  Defect stability in phase-field crystal models: Stacking faults and partial dislocations , 2012, 1210.1527.

[66]  C. Okoro,et al.  Full elastic strain and stress tensor measurements from individual dislocation cells in copper through-Si vias , 2015, IUCrJ.

[67]  Bart Vandevelde,et al.  Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu , 2011 .

[68]  N. Provatas,et al.  Free energy functionals for efficient phase field crystal modeling of structural phase transformations. , 2010, Physical review letters.

[69]  G. Taylor.  The Mechanism of Plastic Deformation of Crystals. Part I. Theoretical , 1934 .

[70]  Banqiu Wu,et al.  High aspect ratio silicon etch: A review , 2010 .

[71]  C. Okoro,et al.  A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability , 2014, IEEE Transactions on Electron Devices.

[72]  F. Che,et al.  Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication , 2012, Journal of Electronic Materials.

[73]  Long-Qing Chen.  Phase-Field Models for Microstructure Evolution , 2002 .

[74]  M. Grant,et al.  Phase-field crystal modeling and classical density functional theory of freezing , 2007 .

[75]  Praveen Kumar,et al.  Interface-related reliability challenges in 3-D interconnect systems with through-silicon vias , 2011 .

[76]  Y.-L. Shen,et al.  Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging , 2012, Microelectron. Reliab..

[77]  Praveen Kumar,et al.  Interfacial Effects During Thermal Cycling of Cu-Filled Through-Silicon Vias (TSV) , 2012, Journal of Electronic Materials.

[78]  Young‐Chang Joo,et al.  Electrical and Mechanical Properties of Through-Silicon Vias and Bonding Layers in Stacked Wafers for 3D Integrated Circuits , 2012, Journal of Electronic Materials.

[79]  D. Kwong,et al.  Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy , 2010 .

[81]  R. Feng,et al.  Characterization of local strain/stress in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron backscattered diffraction and nonlinear thermomechanical model , 2015 .

[82]  C. Okoro,et al.  Experimentally, how does Cu TSV diameter influence its stress state? , 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

[83]  Klaus Hummler,et al.  Temperature-dependent thermal stress determination for through-silicon-vias (TSVs) by combining bending beam technique with finite element analysis , 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

[84]  Daniel Smith,et al.  TSV residual Cu step height analysis by white light interferometry for 3D integration , 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

[85]  Nikolas Provatas,et al.  Phase-field crystal approach for modeling the role of microstructure in multiferroic composite materials , 2015 .

[86]  B. Michel,et al.  Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy , 2015 .

[87]  M. Kunz,et al.  Microstructure Evolution and Defect Formation in Cu Through-Silicon Vias (TSVs) During Thermal Annealing , 2012, Journal of Electronic Materials.

[88]  Riko Radojcic,et al.  TechTuning: Stress Management For 3D Through‐Silicon‐Via Stacking Technologies , 2011 .