论文信息 - Decomposition-aware layout optimization for 20/14nm standard cells

Decomposition-aware layout optimization for 20/14nm standard cells

Decomposition-aware layout design improvements for 8, 9, 11, and 13-track 20/14nm standard cells are presented. Using a decomposition-aware scoring methodology that quantifies the manufacturability of layouts, the Double Patterning Technology (DPT)-compliant layouts are optimized for DPT-specific metrics that include: the density difference between the two decomposition mask layers, the enclosure of stitching areas, the density of stitches, and the design regularity of stitching areas. For a 9-track standard cell, eliminating the stitches from the layout design improved the composite score from 0.53 to 0.70.

Sriram Madhavan | Shobhit Malik | Lynn T.-N. Wang | Luigi Capodieci | Eric Chiu

[1] L. Depre,et al. Enabling 22-nm logic node with advanced RET solutions , 2011, Advanced Lithography.

[2] S. Barnola,et al. Double-patterning requirements for optical lithography and prospects for optical extension without double patterning , 2009 .

[3] Piyush Pathak,et al. A scoring methodology for quantitatively evaluating the quality of double patterning technology-compliant layouts , 2012, Advanced Lithography.

[4] Eitan Shauly,et al. Design ranking and analysis methodology for standard cells and full chip physical optimization , 2009, Advanced Lithography.

[5] Robert C. Bush,et al. P‐95: Fresnel Lenses in Rear Projection Displays , 2001 .

[6] Robert C. Aitken,et al. DFM metrics for standard cells , 2006, 7th International Symposium on Quality Electronic Design (ISQED'06).

[7] Piyush Pathak,et al. Framework for identifying recommended rules and DFM scoring model to improve manufacturability of sub-20nm layout design , 2012, Advanced Lithography.