High-performance AlGaInP light-emitting diodes

A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in AlGaInP across this spectrum have enabled new applications for LEDs including automotive lighting, outdoor variable message signs, outdoor large screen video displays, and traffic signal lights. A review of high-brightness AlGaInP LED technology will be presented.

[1]  G. B. Stringfellow,et al.  Atmospheric pressure organometallic vapor‐phase epitaxial growth of (AlxGa1−x)0.51In0.49P (x from 0 to 1) using trimethylalkyls , 1990 .

[2]  M. Ishikawa,et al.  High-efficiency InGaAlP/GaAs visible light-emitting diodes , 1991 .

[3]  R. Fletcher,et al.  The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer , 1991 .

[4]  E. O’Reilly,et al.  High pressure determination of AlGaInP band structure , 1995 .

[5]  C. P. Kuo,et al.  Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer , 1992 .

[6]  M. Kondow,et al.  Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxy , 1990 .

[7]  Kazuhiko Itaya,et al.  High-brightness InGaAlP green light-emitting diodes , 1992 .

[8]  Yukie Nishikawa,et al.  Anomalous Mg Incorporation Behavior in InGaAlP Grown by Metalorganic Chemical Vapor Deposition , 1990 .

[9]  Gerald B. Stringfellow,et al.  Organometallic Vapor-Phase Epitaxy , 1989 .

[10]  Kohroh Kobayashi,et al.  Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy , 1987 .

[11]  J. Nishizawa,et al.  Electrical characterization of Si-donor-related shallow and deep states in InGaAlP alloys grown by metalorganic chemical vapor deposition , 1991 .

[12]  Kazuhiko Itaya,et al.  InGaAlP visible light laser diodes and light-emitting diodes , 1994 .

[13]  F. A. Kish,et al.  Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes , 1996 .